| PART |
Description |
Maker |
| MT54W4MH9B MT54W4MH8B MT54W1MH36B-5 MT54W1MH36B-7. |
36Mb QDRII SRAM 2-WORD BURST
36Mb QDR⑩II SRAM 2-WORD BURST ⑩分6MB四年防务审查II SRAM字爆
36Mb QDR?┥I SRAM 2-WORD BURST
|
Micron Technology, Inc.
|
| GS8321ZV36E-250I GS8321ZV36E-225I GS8321ZV36E-133 |
Octal 16-/12-Bit Rail-to-Rail DACs with 10ppm/C Max Reference; Package: 20-TSSOP; Temperature Range: 0°C to 70°C
36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 36 ZBT SRAM, 8.5 ns, PBGA165
36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 36 ZBT SRAM, 8 ns, PBGA165
36Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 18 ZBT SRAM, 8.5 ns, PBGA165
36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 32 ZBT SRAM, 6.5 ns, PBGA165
|
GSI Technology, Inc.
|
| GS8321ZV18 GS8321ZV32 GS8321ZV36E-250 GS8321ZV36E- |
36Mb NBT SRAMs
36Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
ETC
|
| CAT64LC10ZJ CAT64LC10ZP CAT64LC10J-TE7 CAT64LC10J- |
18-Mbit QDR™-II SRAM 4-Word Burst Architecture
18-Mbit DDR-II SRAM 2-Word Burst Architecture
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
4-Mbit (256K x 18) Flow-Through Sync SRAM SPI串行EEPROM
SPI Serial EEPROM SPI串行EEPROM
|
Analog Devices, Inc.
|
| GS8342S36GE-250I GS8342S09E-200I GS8342S09GE-200I |
36Mb Burst of 2 DDR SigmaSIO-II SRAM 1M X 36 STANDARD SRAM, 0.45 ns, PBGA165
36Mb Burst of 2 DDR SigmaSIO-II SRAM 4M X 9 STANDARD SRAM, 0.45 ns, PBGA165
36Mb Burst of 2 DDR SigmaSIO-II SRAM 4M X 9 STANDARD SRAM, 0.5 ns, PBGA165
36Mb Burst of 2 DDR SigmaSIO-II SRAM 4M X 8 STANDARD SRAM, 0.45 ns, PBGA165
36Mb Burst of 2 DDR SigmaSIO-II SRAM 4M X 8 STANDARD SRAM, 0.5 ns, PBGA165
36Mb Burst of 2 DDR SigmaSIO-II SRAM 2M X 18 STANDARD SRAM, 0.45 ns, PBGA165
|
GSI Technology, Inc.
|
| GS8322Z18B-166IV GS8322Z18B-166V GS8322Z18B-133IV |
36Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| CY7C1415BV18-250BZI CY7C1415BV18-167BZI |
36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 1M X 36 QDR SRAM, 0.45 ns, PBGA165
36-Mbit QDR™-II SRAM 4-Word Burst Architecture
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| GS8321E32GE-250I GS8321E32E-150I |
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 1M X 32 CACHE SRAM, 5.5 ns, PBGA165
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 1M X 32 CACHE SRAM, 7.5 ns, PBGA165
|
GSI Technology, Inc.
|
| GS8321EV18E-166I GS8321EV32E-250 GS8321EV32GE-225I |
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 2M X 18 CACHE SRAM, 8 ns, PBGA165
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 1M X 32 CACHE SRAM, 6.5 ns, PBGA165
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 1M X 32 CACHE SRAM, 7 ns, PBGA165
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 1M X 32 CACHE SRAM, 8.5 ns, PBGA165
|
GSI Technology, Inc.
|
| GS8320ZV36T-200 GS8320ZV36T-133 GS8320ZV36T-133I G |
36Mb Pipelined and Flow Through Synchronous NBT SRAMs 2M X 18 ZBT SRAM, 6.5 ns, PQFP100
1M X 36 ZBT SRAM, 7 ns, PQFP100 TQFP-100
|
GSI Technology, Inc.
http://
|
| HM66AQB18204BP-33 HM66AQB36104BP-40 HM66AQB9404BP- |
Memory>Fast SRAM>QDR SRAM
36-Mbit QDRTMII SRAM 4-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
